EE-SY171【PDF 1/4 页】SENSOR OPTO TRANS 3.5MM REFL PCB

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Sheet目录410

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Photomicrosensor (Reflective)

EE-SY171

■ Dimensions

Note: All units are in millimeters unless otherwise indicated.

■ Features

? 3-mm-tall, thin model

? RoHS Compliant.

Two, 2 dia.

Two, 1.2 dia.

Anode mark

■ Absolute Maximum Ratings (Ta = 25 ° C)

Four, 0.5

Emitter

Item

Forward current

Symbol

I F

Rated value

50 mA (see note 1)

Pulse forward current I FP

1 A (see note 2)

Reverse voltage

V R

Detector

Collector–Emitter

V CEO

30 V

voltage

Emitter–Collector

V ECO

---

0 ° to 30 °

Internal Cir c uit

Four, 0.25

Ambient

temperature

voltage

Collector current

Collector dissipation

Operating

Storage

I C

P C

T opr

T stg

20 mA

100 mW (see note 1)

–40 ° C to 85 ° C

Unless otherwise specified, the

tolerances are as shown below.

Soldering temperature

T sol

260 ° C (see note 3)

Terminal No.

Name

Anode

Cathode

Collector

Emitter

Dimensions

3 mm max.

3 < mm ≤ 6

6 < mm ≤ 10

10 < mm ≤ 18

18 < mm ≤ 30

Toleran c e

± 0.3

± 0.375

± 0.45

± 0.55

± 0.65

Note: 1. Refer to the temperature rating chart if the ambient temper-

ature exceeds 25 ° C.

2. The pulse width is 10 μ s maximum with a frequency of 100 Hz.

3. Complete soldering within 10 seconds.

■ Ordering Information

Description Model

Photomicrosensor (reflective) EE-SY171

■ Electrical and Optical Characteristics (Ta = 25 ° C)

Item

Symbol

Value

Condition

Emitter

Detector

Forward voltage

Reverse current

Peak emission wavelength

Light current

V F

I R

λ P

I L

1.2 V typ., 1.5 V max.

0.01 μ A typ., 10 μ A max.

940 nm typ.

50 μ A min., 500 μ A max.

I F = 30 mA

V R = 4 V

I F = 20 mA

I F = 20 mA, V CE = 10 V

White paper with a reflection ratio of 90%,

d = 3.5 mm (see note)

Dark current

Leakage current

I D

I LEAK

2 nA typ., 200 nA max.

2 μ A max.

V CE = 10 V, 0 l x

I F = 20 mA, V CE = 10 V with no reflection

Collector–Emitter saturated voltage V CE (sat)

Peak spectral sensitivity wavelength λ P

---

850 nm typ.

---

V CE = 10 V

Rising time

Falling time

30 μ s typ.

V CC = 5 V, R L = 1 k Ω , I L = 1 mA

Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.

Photomicrosensor (Reflective)

EE-SY171

223

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